Chinese translation for "heavily dope"
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- 重掺杂
Related Translations:
heavily: adv.1.重重地，沉重地。2.缓慢地；迟钝地。3.猛烈地，厉害地。4.沮丧地，灰溜溜地。5.沉闷地；〔古语〕悲伤地。6.暴虐地。短语和例子a heavily wooded area 树木浓密的地区。 a heavily guarded fortress 戒备森严的堡垒。 a heavily loaded truck 重载的卡车。 suffer heavily 受到沉重打击
- Example Sentences:
| 1. | The result is showed that the value of square resistence is 30 . 2 o in heavily doping area and 100 . 2o in lightly doping area
实验结果显示，重掺杂区和轻掺杂区的平均方块电阻分别为30 . 2和100 . 2 ，相差70 。 | | 2. | The abrupt heterojunction diode is composed of a 1 m thick heavily doped n - type sic layer and a 0 . 4 m thick lightly doped p - type sic1 - xgex layer with varied composition ratios
在这个异质结中， n型重掺杂3c - sic层的厚度为1 m ， p型轻掺杂sicge层厚度为0 . 4 m ，二者之间形成突变异质结。 | | 3. | In the experiment we also observed negative differential resistance characteristics of gesi hbts with heavily doped base at high collector - emitter voltage and high current . a new interpretation to this phenomenon was given . this
在实验中我们还观察到，在高vce和大电流下，重掺杂基区gesihbt出现负阻现象，我们对这一现象进行了新的解释，认为这是由热电负反馈导致的。 | | 4. | Then , the effect of heavily doped boron on ig of czochralski silicon was also investigated . it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature , ramping annealing respectively . for conventional high - low - high three - step ig annealing , the dz becomes narrower and bmd density is higher in hb samples than that in lb samples , as a result of hb enhancing oxygen precipitation
结果显示，单步高温热处理时重掺硼样品不能形成洁净区；降温退火中，降温速度较为缓慢( 3 / min )时能生成一定量的氧沉淀，但没有洁净区形成；普通高?低?高三步热处理过程中，形成明显的洁净区，但相对轻掺样品而言，洁净区较窄，氧沉淀密度明显偏高，说明重掺硼样品吸杂能力强。 | | 5. | As is known to all , one of the most important characteristics of sige hbt is the strained sige base growing on the si substrate . generally , the base is required to be very thin so as not to cause the base sige crystal lattice mismatching in subsequent annealing process . also , in order not to increase the thermal noise of device , the base is always heavily doped
众所周知， sigehbt的主要特点之一就是在si材料衬底上生长的sige材料是应变的，为了在后续的高温退火工艺中不发生晶格驰豫现象，通常要求器件的基区要做的很薄，同时为了不增加器件的热噪音，通常sigehbt基区都是高掺杂的。 |
- Similar Words：
- "heavily conducting" Chinese translation, "heavily covered electrode" Chinese translation, "heavily cracked" Chinese translation, "heavily damped circuit" Chinese translation, "heavily damped oscillations" Chinese translation, "heavily doped crystal" Chinese translation, "heavily doped diode" Chinese translation, "heavily doped germanium" Chinese translation, "heavily doped layer" Chinese translation, "heavily doped material" Chinese translation
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